TTadnaThe knowledge behind every product
English
EspañolES EnglishEN FrançaisFR ItalianoIT DeutschDE PortuguêsPT
Technology

N3P (3 nm) Fabrication Process Node: what it is, how it works and what it does

N3P is TSMC's 3 nm fabrication process node, a semiconductor manufacturing process that defines the transistor miniaturization scale for the current generation of integrated circuits.

Evidence-backed content 4 sources 08/09/2026

N3P is the designation for the 3 nm fabrication process node developed by TSMC (Taiwan Semiconductor Manufacturing Company). It is a semiconductor manufacturing process that establishes the miniaturization scale of transistors and the integration density of integrated circuits produced under that node.

Naming and nomenclature

The designation N3P follows TSMC's naming convention for its process nodes:

  • N: prefix identifying the fabrication node family (from Node).
  • 3: indicates the nominal node scale, expressed in nanometres (3 nm).
  • P: suffix distinguishing a specific variant or revision within the N3 family, differentiating it from other iterations of the same base node.

In third-party technical documentation, the process is also referenced as fab_process_gen5, suggesting its position as a fifth-generation fabrication process in the manufacturer's production line.

What the 3 nm scale represents

The figure «3 nm» does not correspond to a direct physical measurement of a transistor. It is a commercial and technical classification that groups a set of design parameters: gate geometry, interconnect pitch, transistor density per square millimetre, and energy efficiency per transistor. As the industry advances toward numerically smaller nodes, the relationship between the nominal number and actual physical dimensions becomes increasingly indirect.

Context within TSMC's portfolio

The N3P node is part of TSMC's N3 family, which constitutes the manufacturer's 3 nm process generation. The existence of variants with different suffixes (such as the P itself) indicates that TSMC offers iterations of the same base node with adjustments in performance, power consumption, or fabrication cost, allowing customers to select the variant best suited to their product.

Applications

Integrated circuits fabricated under the N3P node are intended for applications requiring high transistor density and energy efficiency, such as:

  • System-on-chip (SoC) processors for mobile and computing devices.
  • High-performance graphics processing units (GPU).
  • advanced processing chips and inference accelerators.

Scope and limitations of available information

The documentary evidence consulted confirms the identity of the process (TSMC, 3 nm, N3P designation) and its classification as a fabrication node. The sources analysed do not provide specific data on the lithography technology employed, the transistor architecture (FinFET, GAA, or otherwise), the exact transistor density, commercial introduction dates, or the specific products incorporating it. Any claim about those aspects exceeds the scope of the available evidence.

How to interpret its presence in a product

When a chip's or device's technical specification states that the processor is fabricated in N3P or 3 nm (TSMC), it is communicating that the integrated circuit was produced under that specific node. This allows the user or systems engineer to infer the miniaturization generation of the device and, by extension, its relative positioning in terms of transistor density and energy efficiency compared to numerically larger (5 nm, 7 nm) or smaller nodes. It does not, by itself, imply a direct absolute-performance comparison, since final performance also depends on chip architecture, operating frequency, and overall system design.

A node designation is a fabrication-process label, not a performance specification. Two chips fabricated on the same node can differ substantially in performance depending on their architecture and design.